Electronic device including a nonvolatile memory cell

ABSTRACT

An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing.

RELATED APPLICATION

This application is a continuation of and claims priority under 35U.S.C. §120 to U.S. patent application Ser. No. 12/822,992 entitled“Process of Forming an Electronic Device Including a Nonvolatile MemoryCell Having a Floating Gate Electrode or a Conductive Member withDifferent Portions” by Yao et al. filed Jun. 24, 2010, which is assignedto the current assignee hereof and incorporated herein by reference inits entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates to electronic devices and processes offorming electronic devices, and more particularly to, electronic devicesincluding a nonvolatile memory cell and processes of forming the same.

RELATED ART

Integrated circuits can include a logic block that include a dataprocessing unit, such as a central processing unit, a graphicalprocessing unit or the like, and a memory block that stores data thatcan be used by the data processing unit or stored within a hard drive,storage network, or other large memory device. The memory block caninclude volatile memory, nonvolatile memory, or a combination thereof.Many nonvolatile memories include additional layers as compared totransistors within the logic block. A conventional nonvolatile memorycan include a charge storage layer disposed over a substrate, and acontrol gate overlying the charge storage layer. The charge storagelayer can include a floating gate layer, a nitride layer, a layer ofnanocrystals or nanoclusters, or the like. The additional layersincrease costs, increase production times, and reduce yield.

Some integrated circuits have memory cells with only one gate electrodelayer. Such integrated circuits can use a single gate layer to form thegate electrodes for nonvolatile memory cells and transistors within thelogic block. A combination of separate charge storage and control gatelayers is not needed. The process to make such integrated circuits isreferred to as a single poly process, as the nonvolatile memory cellscan be made with only a single layer of polycrystalline silicon.

FIG. 1 includes a schematic diagram of a portion of a conventionalnonvolatile memory array 10 that can be made with a single poly process.The nonvolatile memory array 10 includes four memory cells 100, 101,110, and 111 that are arranged in rows and columns Each memory cellincludes capacitors 12 and 14, a state transistor 16, and an accesstransistor 18. Electrodes of the capacitors 12 and 14 and the gate ofthe state transistor 16 are connected to one another at an electricallyfloating node. The capacitors 12 and 14 are in the form of p-channelmetal-insulator-semiconductor field-effect transistor structures. Suchstructures are hereinafter referred to as “PMOS capacitors.” The stateand access transistors 16 and 18 are n-channel transistors and areconnected in series within each nonvolatile memory cell.

Other electrodes of the capacitors 12 are electrically connected tocontrol lines 140 and 141, and other electrodes of the capacitors 14 areelectrically connected to erase lines 130 and 131. Sources of the statetransistors 16 are electrically connected to a common ground, and thedrains of the access transistors 18 are electrically connected to bitlines 170 and 171. The gates of the access transistors 18 areelectrically connected to access lines 150 and 151. The memory arrayfurther includes p-channel transistors 1900 and 1901. Drains of thep-channel transistors 1900 and 1901 are electrically connected to thedrains of the access transistors 18 within the memory cells 100 and 101,respectively, sources of the p-channel transistors 1900 and 1901 areelectrically connected to a V_(DD) line 180, and gates of the p-channeltransistors 1900 and 1901 are electrically connected to a read-enableline.

FIG. 2 includes a table with voltages used to read, erase, and programthe memory cells 100, 101, 110, and 111. In FIG. 2, BL refers to bitlines, AL refers to access lines, CL refers to control lines, EL refersto erase lines, and RD_en refers to the read enable line. As will bediscussed in more detail later in this specification, the architectureof the nonvolatile memory cell and its use can result in erase disturband reliability issues.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are illustrated by way of example and are not limited in theaccompanying figures.

FIG. 1 includes a schematic diagram of a portion of a conventionalnonvolatile memory array. (Prior Art)

FIG. 2 includes an operating table with voltages used to read, erase,and program the memory cells in the nonvolatile memory array of FIG. 1.(Prior Art)

FIG. 3 includes a depiction of an integrated circuit that includes anonvolatile memory cell array, a program unit, an erase unit, and a readunit in accordance with an embodiment.

FIG. 4 includes a schematic diagram of a portion of a nonvolatile memoryarray in accordance with an embodiment.

FIG. 5 includes an operating table with voltages used to read, erase,and program the memory cells in the nonvolatile memory array of FIG. 4.

FIG. 6 includes an illustration of a cross-sectional view of a portionof a workpiece including a substrate after forming an insulating layerand field isolation regions.

FIG. 7 includes an illustration of a cross-sectional view of theworkpiece of FIG. 6 after forming well regions.

FIGS. 8 and 9 include illustrations of a top view and a cross-sectionalview, respectively, of the workpiece of FIG. 7 after forming adielectric layer and a patterned conductive layer.

FIG. 10 includes an illustration of a cross-sectional view of theworkpiece of FIGS. 8 and 9 after forming doped regions within the activeregions not covered by the patterned conductive layer and after forminginsulating spacers.

FIG. 11 includes an illustration of a cross-sectional view of theworkpiece of FIG. 10 after forming heavily doped regions within portionsof the active regions.

FIG. 12 includes an illustration of a cross-sectional view of theworkpiece of FIG. 11 after forming a substantially completed nonvolatilememory cell.

FIGS. 13 to 16 include illustrations of cross-sectional views of tunnelstructures in accordance with other embodiments.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.For example, the dimensions of some of the elements in the figures maybe exaggerated relative to other elements to help to improveunderstanding of embodiments of the invention.

DETAILED DESCRIPTION

The following description in combination with the figures is provided toassist in understanding the teachings disclosed herein. The followingdiscussion will focus on specific implementations and embodiments of theteachings. This focus is provided to assist in describing the teachingsand should not be interpreted as a limitation on the scope orapplicability of the teachings. However, other teachings can certainlybe utilized in this application. While numerical ranges are describedherein to provide a better understanding of particular embodiments,after reading this specification, skilled artisans will appreciate thatvalues outside the numerical ranges may be used without departing fromthe scope of the present invention.

The term “coupled” is intended to mean a connection, linking, orassociation of two or more electronic components, circuits, systems, orany combination of: (1) at least one electronic component, (2) at leastone circuit, or (3) at least one system in such a way that a signal(e.g., current, voltage, or optical signal) may be partially orcompletely transferred from one to another. A non-limiting example of“coupled” can include a direct electrical connection between electroniccomponent(s), circuit(s) or electronic component(s) or circuit(s) withswitch(es) (e.g., transistor(s)) connected between them. Thus, anelectrical connection is a specific type of coupling; however, not allcouplings are electrical connections.

The term “heavily doped” is intended to mean a dopant concentration thatis at least 1×10¹⁹ atoms/cm³.

The term “intermediate doped” is intended to mean a dopant concentrationthat is (1) between 1×10¹⁷ atoms/cm³ and 1×10¹⁹ atoms/cm³ or (2) higherthan an adjacent lightly doped region and lower than an adjacent heavilydoped region. Thus, an intermediate doped region can have a dopantconcentration of 1×10¹⁶ atoms/cm³ when near a lightly doped regionhaving a dopant concentration of 1×10¹⁵ atoms/cm³ and near a heavilydoped region.

The term “lightly doped,” except when referring to a lightly-doped drain(“LDD”) region, is intended to mean a dopant concentration that is nogreater than approximately 1×10¹⁷ atoms/cm³.

The term “LDD region” is intended to mean a doped region near a sourceregion, a drain region, or a source/drain region of a transistor,wherein such doped region can help to reduce hot carrier degradation ofthe transistor. In many embodiments, an LDD region can have a dopantconcentration that is in a range of approximately 1×10¹⁶ atoms/cm³ toapproximately 1×10¹⁸ atoms/cm³. LDD regions may also be called extensionregions.

The term “metal” or any of its variants when referring to a material isintended to mean to a material that includes an element that is withinany of the Groups 1 to 12, within Groups 13 to 16, an element that isalong and below a line defined by atomic numbers 13 (Al), 31 (Ga), 50(Sn), 51 (Sb), and 84 (Po). Metal does not include Si or Ge.

The terms “comprises,” “comprising,” “includes,” “including,” “has,”“having,” or any other variation thereof, are intended to cover anon-exclusive inclusion. For example, a method, article, or apparatusthat comprises a list of features is not necessarily limited only tothose features but may include other features not expressly listed orinherent to such method, article, or apparatus. Further, unlessexpressly stated to the contrary, “or” refers to an inclusive-or and notto an exclusive-or. For example, a condition A or B is satisfied by anyone of the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

Also, the use of “a” or “an” is employed to describe elements andcomponents described herein. This is done merely for convenience and togive a general sense of the scope of the invention. This descriptionshould be read such that the plurals include one or at least one and thesingular also includes the plural, unless it is clear that it is meantotherwise. For example, when a single item is described herein, morethan one item may be used in place of a single item. Similarly, wheremore than one item is described herein, a single item may be substitutedfor that more than one item.

Group numbers corresponding to columns within the Periodic Table of theelements use the “New Notation” convention as seen in the CRC Handbookof Chemistry and Physics, 81^(st) Edition (2000-2001).

Unless otherwise defined, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. The materials, methods, andexamples are illustrative only and not intended to be limiting. To theextent not described herein, many details regarding specific materialsand processing acts are conventional and may be found in textbooks andother sources within the semiconductor and electronic arts.

A novel memory architecture for a nonvolatile memory array, physicaldesign, and methods of using the memory array can be used to improveresistance to erase disturb and improve reliability of the nonvolatilememory array. In particular, the orientation of the erase lines andprogramming and erasing methods can allow charge carriers to tunnelwithin different components within a memory cell. Charge carriers may betransferred through dielectric layers of different component, as opposedto a single dielectric layer within a single component. Thus,reliability is improved as dielectric failure due to accumulated trappedcharge will take longer as compare to the memory array as described withrespect to FIG. 1. Further, unselected memory cells are substantiallyprevented from their data disturbed during erasing of selected memorycells because the voltages for terminals for unselected memory cells canbe placed at voltages that are closer to one another. More detailsregarding the memory architecture, physical design, and methods of usingthe memory array are described in more detail in reference to thefigures that follow.

FIG. 3 includes a logic depiction of an integrated circuit 20 thatincludes a nonvolatile memory (“NVM”) cell array 22 that is coupled to aprogram unit 24, an erase unit 26, and a read unit 28. Each of theprogram, erase, and read units 24, 26, and 28 can be used to provideappropriate voltages to the NVM cell array 22 for programming, erasing,and reading of memory cells within the NVM cell array 22. The units 24,26, and 28 can include transistors, capacitors, resistors, diodes, andthe like that can be connected to form a logic gate, a voltage divider,a charge pump, a switch, a latch, a column or array strobe, a senseamplifier, another circuit commonly used with nonvolatile memory arrays,or any combination thereof. Although the units 24, 26, and 28 aredepicted as separate units, operations can be combined. For example, asingle charge pump may be used for programming and erasing, or the samevoltage divider may be used for programming and reading. Thus, FIG. 3 ispresented to provide a basic understanding of different parts of theintegrated circuit 20 at a conceptual level and not to constrain thearchitecture, physical design, or operation of the NVM array.

FIG. 4 includes a schematic diagram of a portion of an NVM array 31. Ina particular embodiment, the NVM array may be used in the integratedcircuit 20 of FIG. 3. The NVM array 31 includes four memory cells 3100,3101, 3110, and 3111 that are arranged in rows and columns In aparticular embodiment, the memory cells 3100, 3101, 3110, and 3111 arewithin the same sector and along immediately adjacent rows and columns.In the embodiment as illustrated in FIG. 3, each row of the NVM array 31is driven by three terminals coupled to three lines: an access line, acontrol line, and an erase line. Each column of the NVM array is drivenby two terminals coupled to two lines: a bit line and an access line.One terminal drives the whole array: the bulk.

Each memory cell includes a capacitor 32, a tunnel structure 34, a statetransistor 36, and an access transistor 38. Each of the capacitor 32 andtunnel structure 34 includes electrodes with a dielectric disposedbetween the electrodes. In an embodiment, the capacitor 32, thecapacitor 34, or both can be formed from transistor structures. In thisembodiment, each of capacitor 32 and tunnel structure 34 have anelectrode referred to as the gate, and another electrode referred to asthe active. In a particular embodiment, the capacitor 32 is a PMOScapacitor. The tunnel structure 34 can include many different physicaldesigns that are described in more detail later in this specification.In another embodiment (not illustrated), the capacitor 32, the capacitor34, or both may be implemented as thin-film capacitors.

Each of the state and access transistors 36 and 38 includes a sourceregion, a drain region, a body region, a gate dielectric layer, and agate electrode. In an embodiment, the state and access transistors 36and 38 are n-channel transistors. The gates of the capacitor 32, thetunnel structure 34, and the state transistor 36 are connected to oneanother at an electrically floating node called the floating gate. Thedrain region of the state transistor 36 and the source region of theaccess transistor 38 are coupled to each other, and in a particularembodiment, the state and access transistors are electrically connectedin series. For each of the memory cells 3100, 3101, 3110, and 3111, thedrain of the access transistor 38 is the drain of the memory cell. Thesource of the state transistor 36 is the source of the memory cell. Thegate of the access transistor 38 is the access gate of the access-gatememory cell. The active electrode of the capacitor 32 acts as thecontrol gate of the memory cell. The active electrode of the erasestructure 34 acts as the erase gate of the memory cell.

Each bit line is coupled to the drains of memory cells along at leastpart of the corresponding column Each source line is coupled to thesources of memory cells along at least part of the corresponding columnEach access line is coupled to the access gate of memory cells along atleast part of the corresponding row. Each control line is coupled to thecontrol gate of memory cells along at least part of the correspondingrow. Each erase line is coupled to the erase gate of all memory cellsalong at least part of the corresponding row. Referring to the NVM array31, cells 3100 and 3101 have their access, control, and erase gatescoupled to the access line 3150, control line 3140 and erase line 3130,respectively. Cells 3110 and 3111 have their access, control, and erasegates coupled to the access line 3151, control line 3141 and erase line3131, respectively. Cells 3100 and 3110 have their drains and sourcesconnected to bit line 3170 and source line 3160, respectively. Cells3101 and 3111 have their drains and sources connected to bit line 3171and source line 3161, respectively. The bulk (e.g., the substrate or awell region within the substrate) of all cells are grounded. In theembodiment as illustrated in FIG. 4, each of the couplings as mentionedin this paragraph can be in the form of electrical connections. Forexample, the source regions of the state transistors 36 are electricallyconnected to source lines 3170 and 3171, and the bodies of the state andaccess transistors 36 and 38 are electrically connected to ground orV_(SS).

FIG. 5 includes a table with voltages used to read, erase, and programthe NVM array 31, including memory cells 3100, 3101, 3110, and 3111. InFIG. 5, BL refers to bit lines, AL refers to access lines, CL refers tocontrol lines, EL refers to erase lines, and SL refers to the sourcelines. In FIG. 5, during a read operation, V_(Dread) is the voltageapplied to the drain of the memory cell that is being read. V_(Access)can be approximately at V_(DD) for the integrated circuit. In aparticular embodiment, V_(DD) can be in a range of approximately 0.9 to5 volts. V_(Gread) can be selected so that current can flow out of anunprogrammed or erased memory cell. In a particular embodiment,V_(Gread) can be in a range of approximately 0 volt to approximatelyV_(DD). With respect to erase and program pulses, V_(PP) can be in arange of approximately 8 to approximately 25 volts. V_(inhibit) can bein a range of approximately 1.8 volts to approximately ½ V_(PP).

After reading the specification, skilled artisans will appreciate thatthe particular voltages used can vary depending on the technology andphysical parameters (for example, thickness of a tunnel dielectriclayer) of the memory cells. Further, although absolute values ofvoltages have been given, the voltage differences between the terminalsare more significant than the absolute values of the voltages on theterminations. For example, during an erase pulse, the voltage differencebetween the selected erase line and the other lines is approximatelyV_(PP). In another embodiment, the selected erase line may be at +¾V_(PP) and the other lines can be at approximately −¼ V_(PP). Such anembodiment may be useful if a breakdown voltage (for example, if anenable transistor within the erase unit has a drain-to-sourcepunchthrough voltage less than V_(PP)) or another concern is present.The read or program operation may be performed in addition to or insteadof the erase operation.

The memory architecture and operation of the NVM array 31 allows forbetter reliability and less problems with disturbing data in unselectedmemory cells during an erase operation. When comparing the schematicdiagrams of FIGS. 1 and 4, the orientation of the erase lines aredifferent. In FIG. 4, the erase lines 3130 and 3131 are oriented in thesame direction as the control lines 3140 and 3141. In a particularembodiment, the erase and control lines 3130, 3131, 3140, and 3141 areoriented along rows of memory cells. Compare this to the memory array 10in FIG. 1 that has an orthogonal relationship between the erase linesand control lines. More particularly, in which the erase lines 130 and131 are oriented along columns of memory cells, and the control lines140 and 141 are oriented along columns of memory cells.

Referring to the NVM array 31, during a program pulse for a selectedmemory cell, electrons tunnel from the channel of the state transistor36 to the floating gate electrode through the gate dielectric layer ofthe state transistor 36. During an erase pulse, electrons tunnel fromthe floating gate electrode to the active electrode of the tunnelstructure 34, via a tunnel dielectric layer of the tunnel structure 34.Thus, electrons tunnel through the gate dielectric layer of the statetransistor 36 during programming, and electrons tunnel through thetunnel dielectric layer of the tunnel structure 34 during erasing.Referring to the memory array 10 in FIG. 1, electrons tunnel through thedielectric layer of the capacitor 14 during programming and erasing. Asmore charge carriers, such as electrons, pass through the samedielectric layer of the same component, more defects are generatedwithin the dielectric. If the accumulated defects within the dielectriclayer become too large, the dielectric layer breaks down and renders thememory cell inoperable. Thus, a memory cell within the NVM array 31 mayhave better reliability because charge carriers tunnel through differentdielectric layers of different components during programming anderasing, as compared to a memory cell within memory array 10 wherecharge carriers tunnel through the same dielectric layer of the samecomponent during programming and erasing.

Erase disturb can be reduced or even substantially eliminated with theNVM array 31. During an erase pulse, memory cells are erased as a row oras a segment of a row, such as a word. The selected erase line is at aparticular voltage, such as V_(PP), and all other lines are atsubstantially the same voltage, such as 0 volts, which is different fromthe particular voltage. Thus, other than the floating gate electrode,all electrodes of unselected cells are at about the same voltage, whichsignificantly reduces the likelihood of an unselected memory cell beingdisturbed during an erase pulse. Referring to the memory array 10,memory cells are to be erased on a bit-by-bit basis. Thus, during anerase pulse, different voltages are used on the electrodes of unselectedmemory cells. The source regions of the state transistors 16 are atground, the erase line 130 is at 10 volts, the erase line 131 is atV_(DD), the control line 140 is at 0 volts, and the other control line141 is at 0 volts. Thus, during an erase pulse, any of the unselectedmemory cells within the memory array 10 will have a voltage differencebetween at least two of (i) a source region of the state transistor 16,(ii) an electrode of the capacitor 12, and (iii) an electrode of thecapacitor 14. The likelihood of erase disturb increases with the productof the voltage difference and time. If memory cell 100 in the memoryarray 10 is frequently programmed and erased, the other memory cells101, 110, and 111 have a greater likelihood of an erase disturb problem,particularly if memory cells 101, 110, and 111 are programmed and erasedinfrequently. Thus, the likelihood of an erase disturb issue issignificantly less with the NVM array 31 when using voltages in thetable of FIG. 5 than with the memory array 10 in FIG. 1 when usingvoltages in the table of FIG. 2.

A variety of physical designs can be used with the NVM array 31. Thelayout of memory cell as illustrated is merely to simplify understandingof the different parts of the memory cell. Skilled artisans willappreciate that other layouts can be used to achieve a more compactmemory cell. The description below provides some embodiments that can beused. For example, the NVM array 31 can be formed using a single polytype of process. Separate floating gate and control layers are notrequired. After reading this specification, skilled artisans willappreciate that many other embodiments can be used without deviatingfrom the scope of the appended claims.

FIG. 6 includes an illustration of a cross-sectional view of a portionof a workpiece 40 that includes a substrate 42 having a primary surface43. The substrate 42 can include a monocrystalline semiconductor wafer,a semiconductor-on-insulator wafer, a flat panel display (e.g., asilicon layer over a glass plate), or another substrate conventionallyused to form electronic devices. The portion of the substrate 42illustrated in FIG. 6 includes a Group 14 element (e.g., carbon,silicon, germanium, or any combination thereof) that is lightly dopedwith an n-type or p-type dopant. An insulating layer 46 is formed overthe substrate 42, and field isolation regions 44 are formed withinportions of the substrate 42. The insulating layer 46 can include a padlayer and a stopping layer (e.g., a polish-stop layer or an etch-stoplayer) that are sequentially formed over the substrate 42 using athermal growth technique, a deposition technique, or a combinationthereof. Each of the pad layer and the stopping layer can include anoxide, a nitride, an oxynitride, or any combination thereof. In anembodiment, the pad layer has a different composition as compared to thestopping layer. In a particular embodiment, the pad layer includes anoxide, and the stopping layer includes a nitride. The field isolationregions 44 can be formed using a shallow trench isolation,local-oxidation-of-silicon, or another technique. The field isolationregions 44 define active regions 48, which are portions of the substrate42 that lie between the field isolation regions 44.

FIG. 7 includes the workpiece of FIG. 6 after forming well regions 52,54, 56, and 58. The insulating layer 46 is removed and an implant screenlayer 50 is formed over the active regions. Well regions 52 and 56 havethe same conductivity type, and well regions 54 and 58 have the oppositeconductivity type as compared to well regions 52 and 56. In a particularembodiment, the well regions 52, 56, and 58 at least in part determinethe dopant concentration of body regions of subsequently formedstructures. The well region 54 can be a channel-stop region. Acombination of the field isolation region 44 and well region 54 can helpto electrically isolate the well regions 52 and 56 from each other. In aparticular embodiment, the well regions 52 and 56 are n-well regions,and well regions 54 and 58 are p-well regions. The well regions 52, 54,56, and 58 are lightly doped, and have dopant concentrations higher thanthe substrate 42. The well regions 52 and 56 may have the same dopantconcentration or different dopant concentrations, and the well regions54 and 58 may have the same dopant concentration or different dopantconcentrations.

The well regions 52 and 56 can be formed during the same dopingoperation or different doping operations, and the well regions 54 and 58may be formed during the same doping operation or different dopingoperation. In an embodiment, when a high-energy ion implanter is used,doped ions can be put at a sufficiently high energy so that dopant isimplanted into the substrate 42 under the field isolation region 44 toform the well region 54. In this embodiment, well regions 54 and 58 canbe formed during the same doping operation. In another embodiment (notillustrated), any or all of the well regions 52, 54, 56, and 58 may beformed before the field isolation region 44. In a particular embodiment,a high-energy ion implanter may not be available, and all of the wellregions 52, 54, 56, and 58 may be formed before the field isolationregion 44. In another particular embodiment, the well region 54 may beformed after patterning the insulating layer 46 to define an opening anddoping the substrate 42 to form the well region 54 before forming thefield isolation region 44. The other well regions 52, 56, and 58 may beformed after forming the field isolation regions.

In another embodiment (not illustrated), one or more of the well regionsmay be omitted. For example, if the dopant concentrations of the bodyregions for the subsequently-formed capacitor and tunnel structure(formed well regions 52 and 56) are greater than the dopantconcentrations of the body regions for the subsequently-formed accessand state transistors, the substrate 42 may have a conductivity type anddopant concentration, such that well region 58 may not be required.

After reading this specification, skilled artisans will appreciate thatdopant concentrations and timing of formation of the well regions 52,54, 56, and 58, both relative to one another and with respect to thefield isolation region 44, can be adjusted to a particular application.Further, not all of the well regions 52, 54, 56, and 58 are required.Thus, the well regions 52, 54, 56, and 58, or the absence thereof, canbe tailored for the particular components that will be formed within thewell regions.

FIGS. 8 and 9 include illustrations of a top view and a cross-sectionalview, respectively, after removing the implant screen layer 50 andforming a dielectric layer 70 and a patterned conductive layer 62. FIG.9 includes a cross-sectional view at sectioning line 9-9 in FIG. 8. Theimplant screen layer 50 is removed, and the dielectric layer 70 isformed over the well regions 52, 56, and 58. The dielectric layer 70 caninclude portions that will be a capacitor dielectric layer over wellregion 52, a tunnel dielectric layer over the well region 56, and a gatedielectric layer over the well region 58. The dielectric layer 70 caninclude an oxide, a nitride, an oxynitride, or any combination thereof.In an embodiment, the thickness of the dielectric layer 70 is no greaterthan approximately 20 nm, and in another embodiment, the dielectriclayer 70 is at least approximately 5 nm. In a particular embodiment, thedielectric layer 70 has a thickness in a range of approximately 11 toapproximately 15 nm The different portions of the dielectric layer canhave the same composition or different composition, and the samethickness or different thicknesses. The dielectric layer 70 can beformed using a thermal growth technique, a deposition technique, or acombination thereof.

A layer of a polycrystalline or amorphous semiconductor material isformed by depositing the polycrystalline or amorphous semiconductormaterial over the substrate 42 and doped to include a p-type heavilydoped portion and an n-type heavily doped portion to make the layerconductive. The polycrystalline or amorphous semiconductor materialincludes one or more Group 14 elements. In one embodiment, the layer hasa thickness no greater than approximately 500 nm, and in anotherembodiment, the layer has a thickness of at least approximately 50 nm.In a particular embodiment, the layer has a thickness in a range ofapproximately 100 nm to approximately 300 nm. The layer is patterned toform a conductive member 62 and a word line 66, as illustrated in FIG.8. The conductive member 62 is the floating gate for the memory cell.Portions 622 and 624 of the conductive member 62 have oppositeconductivity types. In a particular embodiment, the portion 622 has ap-type conductivity, and the portion 624 and the word line 66 have ann-type conductivity. A subsequently-formed metal-containing layer willbe formed over the portions 622 and 624, so that the portions areelectrically connected to each other to form a floating gate electrodefor the memory cell. Referring to FIG. 9, the part of the conductivemember 62 that is disposed over the well region 52 is an upper electrode72 for a capacitor, another part of the conductive member 62 that isdisposed over the well region 56 is an upper electrode 74 for a tunnelstructure, and still another part of the conductive member 62 that isdisposed over the well region 58 is a gate electrode 76 for a statetransistor. The portion of the word line 66 disposed over the wellregion 58 is a gate electrode 78 for an access transistor.

FIG. 10 includes an illustration of a cross-sectional view after formingintermediate doped regions 82, 84, and 86 and insulating spacers 88.Before forming the intermediate doped regions 82, 84, and 86, an oxidelayer (not illustrated) may be formed by thermally oxidizing theconductive member 62 and word line 66, including upper electrodes 72 and74 and gate electrodes 76 and 78. The oxide layer has a thickness nogreater than approximately 20 nm. In an embodiment, the intermediatedoped regions 82 and 84 have the same conductivity type, and theintermediate doped regions 86 have the opposite conductivity type. In aparticular embodiment, intermediate doped regions 82 and 84 have ap-type conductivity, and the intermediate doped regions 86 have ann-type conductivity. In an embodiment, the intermediate doped regions82, 84, and 86 have dopant concentrations of less than 1×10¹⁹ atoms/cm³,and in another embodiment, the intermediate doped regions 82, 84, and 86have dopant concentrations greater than well regions 52, 56, and 58,respectively. In a particular embodiment, the intermediate doped regions82, 84, and 86 have dopant concentrations in a range of approximately1×10¹⁷ atoms/cm³ to approximately 1×10¹⁸ atoms/cm³.

An insulating layer is conformally deposited and anisotropically etchedto form the insulating spacers 88. The insulating spacers 88 include anoxide, a nitride, an oxynitride, or any combination thereof. The widthsof the insulating spacers 88, as measured at their bases, generallycorrespond to the thickness of the insulating layer that is deposited.In an embodiment, the thickness of the insulating layer, as deposited,is no greater than approximately 500 nm, and in another embodiment, thethickness is at least approximately 20 nm. In a particular embodiment,the thickness is in a range of approximately 50 to 200 nm

FIG. 11 includes an illustration of a cross-sectional view after formingheavily doped regions 92, 94, 96, 98, and 99. In an embodiment, heavilydoped regions 92, 96, and 98 have a conductivity type opposite that ofheavily doped regions 94 and 99. In a particular embodiment, heavilydoped regions 92, 96 and 98 have an n-type conductivity, and heavilydoped regions 94 and 99 have a p-type conductivity. The heavily dopedregions 92, 96, and 99 are well contact regions for the well regions 52,56, and 58, respectively. If the well region 58 would not be present,the heavily doped region 99 would be a substrate contact region forsubstrate 42. Heavily doped regions 98 are source, source/drain, anddrain regions for the state and access transistors. The heavily dopedregions 92, 94, 96, 98, and 99 can have the same dopant concentration ordifferent dopant concentrations. In a particular embodiment, the heavilydoped regions 92, 94, 96, 98, and 99 have a dopant concentration of atleast approximately 1×10²⁰ atoms/cm³. The depths of the heavily dopedregions 92, 94, 96, 98, and 99 are relatively shallow and may havedepths no greater than approximately 500 nm. In a particular embodiment,the depths of the heavily doped regions 92, 94, 96, 98, and 99 are in arange of approximately 50 to 300 nm. In the embodiment as illustrated,the heavily doped regions 92 and 96 have junction depths that are deeperthan the intermediate doped regions 82 and 84, respectively.

FIG. 12 includes an illustration of a cross-sectional view after forminga substantially completed memory cell. Any exposed portions of thedielectric layer 70 are removed, and a conductive layer is formed overthe workpiece. The conductive layer can be a metal-containing layer thatincludes a metal-containing material, such as a refractory metal. Anexemplary refractory metal includes titanium, tantalum, tungsten,cobalt, platinum, iridium, or the like. The workpiece including theconductive layer are heated to allow the conductive layer to react withportions of a semiconductor material to form a metal-semiconductorcompound. The conductive layer does not significantly react withinsulating materials, such as the field isolation region 44 and theinsulating spacers 88. Unreacted portions of the conductive layer areremoved to form the metal-semiconductor members 102, 104, and 106.

The metal-semiconductor members 102 include a semiconductor materialwithin the active regions, and the metal-semiconductor members 104 and106 include a semiconductor material within the conductive member 62(see FIG. 6), which includes the upper electrodes 72 and 74 and gateelectrode 76, and within the word line 66, which includes the gateelectrode 78. The metal-semiconductor member 104 electrically connectsthe differently doped portions 622 and 624 of the conductive member 62to each other. As used herein, refractory metals and refractorymetal-containing compounds can withstand high temperatures (e.g.,melting points of such materials can be at least 1400° C.) and have alower bulk resistivity than heavily doped semiconductor materials.

The memory cell includes a capacitor 122, a tunnel structure 124, astate transistor 126, and an access transistor 128. In the embodiment asillustrated, the capacitor 122 is a PMOS capacitor, and the state andaccess transistors 126 and 128 are n-channel transistors. As will beaddressed later in this specification, other tunnel structures can beused for the tunnel structure 124 in FIG. 12.

Further processing is performed so that the heavily doped regions 92 and94 are coupled to a control gate terminal 1102, the heavily doped region96 is coupled to an erase terminal 1104, the heavily doped region 98closest to the center of FIG. 12 is coupled to a source terminal 1106,gate electrode 78 is coupled to an access terminal 1108, the heavilydoped region 98 closest to the right-hand side of FIG. 12 is coupled toa drain terminal 1110, and the heavily doped region 99 is coupled to aground or V_(SS) terminal 1112. In a particular embodiment (notillustrated), one or more interlevel dielectric and interconnect levelsare formed to complete formation of the integrated circuit. In thisembodiment, the heavily doped regions 92 and 94 are coupled to a controlline, the heavily doped region 96 is coupled to an erase line, theheavily doped region 98 closest to the center of FIG. 12 is coupled to asource line, gate electrode 78 is coupled to an access line, the heavilydoped region 98 closest to the right-hand side of FIG. 12 is coupled toa bit line, and the heavily doped region 99 is coupled to ground orV_(SS) for the integrated circuit. In a more particular embodiment,couplings can be replaced by electrical connections. For example, theheavily doped regions 92 and 94 are electrically connected to a controlgate terminal 1102 the heavily doped region 96 is electrically connectedto an erase terminal 1104, the heavily doped region 98 closest to thecenter of FIG. 12 is electrically connected to a source terminal 1106,gate electrode 78 is electrically connected to an access terminal 1108,the heavily doped region 98 closest to the right-hand side of FIG. 12 iselectrically connected to a drain terminal 1110, and the heavily dopedregion 99 is electrically connected to a ground or V_(SS) terminal 1112.

In an embodiment (not illustrated), one or more interlevel dielectricand interconnect levels are formed to complete formation of theintegrated circuit. In this embodiment, the heavily doped regions 92 and94 are coupled to a control line, the heavily doped region 96 is coupledto an erase line, the heavily doped region 98 closest to the center ofFIG. 12 is coupled to a source line, gate electrode 78 is coupled to anaccess line, the heavily doped region 98 closest to the right-hand sideof FIG. 12 is coupled to a bit line, and the heavily doped region 99 iscoupled to ground or V_(SS) for the integrated circuit.

Although not illustrated, other electrical components are formed usingthe process flow as previously described. For example, electroniccomponents within program, erase, and read units, and if present, withinthe logic block can be formed using the process flow described above.Because the NVM cells are formed using a single poly process, ratherthan a double poly process, the NVM cells can be formed without addingany additional operations used to form electronic components, andparticularly transistor structures, outside of the NVM cell array.

The operations of the memory cell are discussed with respect to thememory cell 3100 in FIG. 4 and the physical design in FIG. 12. During aprogram pulse, SL 1370, source terminal 1106, AL 3150, access terminal1108, BL 3160, and drain terminal 1110 are at approximately 0 volts orV_(SS). CL 3140, control gate terminal 1102, EL 3130, and erase terminal1104 are at approximately V_(PP). In a particular embodiment, V_(PP) isin a range of approximately 10 volts to approximately 18 volts. Duringthe erase pulse, electrons within the well region 58 tunnel into thegate electrode 76 of the state transistor 126. Thus, charge carrierspass through the dielectric layer 70 (that is, the gate dielectriclayer) of the state transistor 126. The charge carriers affect thevoltage of the floating gate for the memory cell. When the chargecarriers are electrons, the voltage of the floating gate is reducedduring a program pulse.

During an erase pulse, CL 3140, control gate terminal 1102, SL 1370,source terminal 1106, AL 3150, access terminal 1108, BL 3160, and drainterminal 1110 are at approximately 0 volts or V_(SS). EL 3130 and eraseterminal 1104 are at approximately V_(PP). During the erase pulse,electrons within the floating gate tunnel into the well region 56 of thetunnel structure 124. Thus, charge carriers pass the through thedielectric layer 70 of the tunnel structure 124. The charge carriersaffect the voltage of the floating gate for the memory cell. When thecharge carriers are electrons, the voltage of the floating gate isincreased during an erase pulse.

Thus, with the memory cell in accordance with the embodiment asillustrated in FIG. 12, charge carriers pass through the dielectriclayer 70 of the state transistor 126 during a program pulse, and chargecarriers pass through the dielectric layer 70 of the tunnel structure124 during an erase pulse. Compare the memory cell as illustrated inFIG. 1, wherein charge carriers pass through the dielectric layer of thecapacitor 14 both during a program pulse and during an erase pulse.Accordingly, for the same number of program and erase cycles, morecharge can be trapped within the dielectric of the capacitor 14 ascompared to each of the dielectric layer 70 of the state transistor 126and the dielectric layer 70 of the tunnel structure 124. Therefore, thememory cells in FIGS. 4 and 12 are more resistant to dielectricbreakdown during normal operation of the memory cells, as compared tothe memory cells of FIG. 1.

During a reading operation, SL 1370 and source terminal 1106 are atapproximately 0 volts or V_(SS). CL 3140, control gate terminal 1102, EL3130, and erase terminal 1104 are at approximately V_(Gread). In anembodiment, V_(Gread) is approximately V_(DD). AL 3150 and accessterminal 1108 are at approximately V_(Access), which is approximatelyV_(DD). The voltage for V_(DD) will vary depending on the technologyused. V_(DD) can be in a range of approximately 0.9 volts toapproximately 5.0 volts. BL 3160 and drain terminal 1110 may bepre-charged to a predetermined voltage, such as V_(DD), ½ V_(DD), oranother voltage other than the voltage on SL 1370 and the sourceterminal 1106, before the read operation begins. During the readoperation, a sense amplifier and other circuitry within the read unitcan be coupled to BL 3160 and can determine the state of the memory cell3100. If the voltage on BL 3160 remains above a predetermined threshold,no significant current flows through the state transistor 126, and thememory cell is determined to be in a program state. If the voltage on BL3160 is reduced below the predetermined threshold, significant currentflows through the state and access transistors 126 and 128, and thememory cell is determined to be in an erased state.

The tunnel structure 124 has significant features. The intermediatedoped region 84 may or may not abut the metal-semiconductor member 102overlying the heavily doped region 96. Further, the intermediate dopedregion 84 is significantly more heavily doped as compared to the wellregion 56. In a particular embodiment, the intermediate doped region 84has a p-type conductivity, and the well region 56 and heavily dopedregion 96 have an n-type conductivity. The intermediate doped region 84can form a leaky junction with the metal-semiconductor member 102, theheavily doped region 96, or both. During an erase pulse and a programpulse, the voltage on the erase terminal 1104 can be sufficiently highenough to cause breakdown between the intermediate doped region 84 andeither or both of the metal-semiconductor member 102 and heavily dopedregion 96. Thus, during an erase or program pulse, the voltage on theintermediate doped region 84 can approach the voltage on the eraseterminal 1104. The intermediate doped region 84 can help to control thespace charge region that forms within the well region 56 to be limitedto the portion of the well region 56 that directly underlies the upperelectrode 74. Thus, the tunnel structure 124 may not go into deepdepletion during an erase pulse.

Another tunnel structure can be used for the tunnel structure 124. FIG.13 includes a top view of a partially-formed tunnel structure 134. Thefield isolation region 44, well region 56, and the conductive memberincluding the upper electrode 74 are formed using any of the embodimentsas previously described. A mask is formed and has a shape as illustratedby dashed line 1384. The mask covers the field isolation region 44 andportions of the well region 56 immediately adjacent to the fieldisolation region 44. The mask defines an opening in which the upperelectrode 74 and portions of the well region 56 immediately adjacent tothe upper electrode 74 are exposed. A doping operation forms anintermediate doped region substantially similar to the intermediatedoped region 84 except that the intermediate doped region using the maskwould not extend to the field isolation region 44. For example, thefirst intermediate doped region can have an edge that is disposedbetween and spaced apart from the second electrode and an outer edge ofthe active region, wherein the outer edge is define by the fieldisolation region. The mask is removed, and although not illustrated, aninsulating spacer 88 and a heavily doped region within the well region56 are formed. The heavily doped region would be substantially similarto the heavily doped region 96. Unlike the heavily doped region 96, theheavily doped region formed using the embodiment as illustrated in FIG.13 can have a junction depth that is shallower than the intermediatedoped region and still make good contact with the well region 56.

FIG. 14 includes an illustration of a cross-sectional view of a tunnelstructure 144. The tunnel structure 144 is substantially identical totunnel structure 124 or 134 except that it does not have theintermediate doped region 84. The tunnel structure 144 has a spacecharge region that forms within the well region 56 to be limited to theportion of the well region 56 between the heavily doped regions 96.Thus, the tunnel structure 144 may not go into deep depletion during anerase or program pulse.

FIG. 15 includes an illustration of a cross-sectional view of a tunnelstructure 152 that can be a PMOS capacitor. The tunnel structure 152 issubstantially similar to capacitor 122 except that tunnel structure 152is smaller. Features within the tunnel structure 152 are formed atsubstantially the corresponding features in the capacitor 122. Thus, theupper electrode 1572 of the tunnel structure 152 has the sameconductivity type and substantially the same doping concentration ascompared to the upper electrode 72 of the capacitor 122. Further, theintermediate doped regions 1582 of the tunnel structure 152 has the sameconductivity type and substantially the doping concentration and depthas the intermediate doped regions 82 of the capacitor 122, the heavilydoped region 1592 of the tunnel structure 152 has the same conductivitytype and substantially the doping concentration and depth as the heavilydoped region 92 of the capacitor 122, and the heavily doped regions 1594of the tunnel structure 152 has the same conductivity type andsubstantially the doping concentration and depth as the heavily dopedregions 94 of the capacitor 122.

FIG. 16 includes an illustration of a cross-sectional view of a tunnelstructure 164, which includes part of a p-channel transistor structure,similar to capacitor 122, and part of an n-channel transistor structure,similar to state and access transistors 126 and 128. Features within thetunnel structure 164 are formed at substantially the correspondingfeatures in the capacitor 122 and the state and access transistors 126and 128. Thus, a portion 1672 of upper electrode of the tunnel structure164 has the same conductivity type and substantially the same dopingconcentration as compared to the upper electrode 72 of the capacitor122, and another portion 1676 of upper electrode of the tunnel structure164 has the same conductivity type and substantially the same dopingconcentration as compared to the upper electrodes 76 and 78 of thetransistors. Although not illustrated, a conductive region that issubstantially identical to the metal-semiconductor members 104 is formedover the portions 1672 and 1676, so that the portions are electricallyconnected to one another.

The intermediate doped region 1682 of the tunnel structure 164 has thesame conductivity type and substantially the doping concentration anddepth as the intermediate doped regions 82 of the capacitor 122, and theintermediate doped region 1686 of the tunnel structure 164 has the sameconductivity type and substantially the doping concentration and depthas the intermediate doped regions 86 of the state and access transistors126 and 128. The heavily doped region 1692 of the tunnel structure 164has the same conductivity type and substantially the dopingconcentration and depth as the heavily doped region 92 of the capacitor122, and the heavily doped region 1698 of the tunnel structure 164 hasthe same conductivity type and substantially the doping concentrationand depth as the heavily doped regions 98 of the state and accesstransistors 126 and 128.

The different tunnel structures as described herein can have differenterase voltages. The description of voltages for erasing are presentedsolely to allow for a comparisons of erase voltages between differenttunnel structures and not to limit any tunnel structure to a specificset of erasing voltages. For a memory cell being erased, the controlterminal, source terminal, word line, and drain terminal are all at 0volts. During an erase pulse, the tunnel structures 124 and 134 can beerased when the erase terminal is in a range of approximately 9.1 voltsto approximately 9.6 volts. For the tunnel structure 144, the eraseterminal can be at approximately 9.7 to approximately 10.1 volts, andfor the tunnel structure 152, the erase terminal can be in a range ofapproximately 10.6 volts to approximately 11.0 volts. Although highervoltages than those described can be used, a lower voltage can allow asmaller charge pump within the erase unit to be used.

Other embodiments can be used without deviating from the scope of thepresent invention. The orientation of the memory array 31 can be changedby reversing rows and columns In a particular embodiment, theillustration in FIG. 4 can be rotated 90°. The erase lines remainparallel to the control lines. In another embodiment, referring to FIG.12, the portions of the heavily doped regions 94 and 96 do not need tobe disposed at both sides of the active regions for the capacitor 122and the tunnel structure 124. For example, the portions of the heavilydoped regions 94 and 96 that are not disposed under a terminal (that is,the control gate terminal 1102 or the erase terminal 1104) are notrequired, as other portions of the heavily doped regions 94 and 96underlie the control gate terminal 1102 or the erase terminal 1104 andprovide a good ohmic contact to the corresponding well regions.

Further, the metal-semiconductor members 102, 104, and 106 can be formedat different times or may be replaced by another material. Referring toFIG. 8, after forming and doping the conductive layer for the conductivemembers 62 and 66, a metal-containing layer can be formed over theconductive layer before patterning to form conductive members 62 and 66.The metal-containing layer can include any of the materials aspreviously described with respect to the metal-semiconductor members102, 104, and 106. Additionally, the metal-containing layer can includea metal-nitride or metal-semiconductor-nitride compound. Themetal-nitride or metal-semiconductor-nitride compound many be conductiveand act as an antireflective layer. Still further, a reaction may or maynot be performed. The metal-containing layer can be in elemental form ormay be deposited as a compound. With respect to the metal-semiconductormembers 102, a contact silicidation process can be performed rather thanforming the metal-semiconductor members 102 as illustrated.

A more robust NVM cell can be formed that is more resistant todielectric breakdown from repeated program and erase cycles of a NVMcell. Further, the architecture of the NVM array 31 and its operationreduces the likelihood of an erase disturb of unselected memory cellswhen erasing selected memory cells. Thus, data integrity is better forthe NVM array 31 as compared to the NVM array 10 of FIG. 1. Stillfurther, the process flow for forming the NVM array 31 can besubstantially the same as a process flow for forming transistors withinlogic block of the integrated circuit.

After reading this specification, skilled artisans will appreciate thatmany different layouts and processing operations can be used withoutdeviating from the present invention. The layout as illustrated in FIG.8 is provided to simplify understanding of an exemplary layout for amemory cell. Many other layouts can be used, and a more compact cell canbe formed in another embodiment. The exact physical orientation of eachcomponent within the memory cell can be changed as long as the couplingsand electrical connections described herein are maintained. The order ofsome processing operations can be changed if needed or desired.

The memory cell in the embodiment as illustrated and described in FIG.12 is programmed and erased using Fowler-Nordheim tunneling. In anotherembodiment, the memory cell of FIG. 12 may be programmed using hotcarrier injection. In this embodiment, the voltage on CL 3140, controlgate terminal 1102, EL 3130, and erase terminal 1104 can be in a rangeof approximately 6 volts to approximately 8 volts, SL 3170 and sourceterminal 1106 are at approximately 0 volts or V_(SS), and AL 3150,access terminal 1108, BL 3160, and drain terminal 1110 can be in a rangeof approximately 4 to approximately 6 volts. In this particularembodiment, electrons can be injected into the floating gate at the gateelectrode 76 of the state transistor 126. All unselected lines andterminals would be at substantially 0 volts, and therefore, the NVMarray 31 may be more resistant to program disturb issues as compared tothe NVM array 10 in FIG. 1. If program performance for hot carrierinjection is to be improved, a p-type halo region could be formed nearthe drain of the state transistor 126. The erase operation can remainthe same, and thus, carriers pass through dielectric layers of differentcomponents during program and erase pulses.

In yet further embodiments, the program and erase states can bereversed, such that the program state corresponds to a relatively higherfloating gate voltage, and the erase state corresponds to a relativelylower floating gate voltage. Such an embodiment can be achieved byreversing the polarities of the voltages in the erase and programportions of the table in FIG. 5. For example, Vpp can be approximately−10 volts to approximately −18 volts. In addition, conductivity typesmay be reversed.

After reading this specification, skilled artisans will appreciate theflexibility in implementing different layouts, processing flows,operating techniques (program, erase, read), or any combination thereofthat allow the NVM memory cell array to be tailored to a particularapplication. Thus, the NVM memory cell array can be integrated into anexisting logic process flow, using existing program, erase, and readunits for NVM memories with no or only some changes.

Many different aspects and embodiments are possible. Some of thoseaspects and embodiments are described below. After reading thisspecification, skilled artisans will appreciate that those aspects andembodiments are only illustrative and do not limit the scope of thepresent invention.

In a first aspect, an electronic device including a nonvolatile memorycell can include a capacitor having a first electrode and a secondelectrode, wherein a control gate terminal is coupled to the firstelectrode, and the second electrode has a first conductivity type. Thenonvolatile memory cell can also include a tunnel structure having afirst electrode and a second electrode, wherein an erase terminal iscoupled to the first electrode, and at least a portion of the secondelectrode has a second conductivity type opposite the first conductivitytype. The nonvolatile memory cell can further include a state transistorincluding a source region, a drain region, and a gate electrode, whereina floating gate electrode for the nonvolatile memory cell includes thegate electrode, the second electrode of the capacitor, and the secondelectrode of the tunnel structure. The nonvolatile memory cell can stillfurther include an access transistor including a source region, a drainregion, and a gate electrode, wherein the source region of the accesstransistor is coupled to the drain region of the state transistor.

In an embodiment of the first aspect, the second electrode of thecapacitor, the second electrode of the tunnel structure, the gateelectrode of the state transistor, and the gate electrode of the accesstransistor are formed from a same layer including polycrystallinesilicon or amorphous silicon. In another embodiment, the electronicdevice further includes a metal-containing member disposed over andsubstantially coterminous with the floating gate.

In still another embodiment of the first aspect, the capacitor includesa p-channel transistor structure, the state transistor is a firstn-channel transistor, and the access transistor is a second n-channeltransistor. In a particular embodiment, substantially all of the secondelectrode of the tunnel structure is n-type doped. In a more particularembodiment, the first electrode of the tunnel structure includes ann-well region and a p-type region that is disposed within the n-wellregion and adjacent to the second electrode of the tunnel structure. Inan even more particular embodiment, the electronic device furtherincludes an n-well contact region disposed within the n-well region andadjacent to the p-type region, and a metal-containing member thatcontacts the n-well contact region. In another more particularembodiment, the first electrode of the tunnel structure includes ann-well region that does not include a p-type region.

In a further embodiment of the first aspect, the first electrode of thetunnel structure includes an n-well region, and the second electrode ofthe tunnel structure includes a p-type portion and an n-type portion,wherein the p-type portion is adjacent to a first side of the secondelectrode, and the n-type portion is adjacent to a second side of thesecond electrode that is opposite the first side. A p-type region isdisposed within the n-well region and adjacent to the first side of thesecond electrode, and an n-type region is disposed within the n-wellregion, having a higher dopant concentration than the n-well region, andis adjacent to the second side of the second electrode.

In still a further embodiment of the first aspect, the first electrodeof the capacitor includes a first n-well region, the first electrode ofthe tunnel structure includes a second n-well region, and the source anddrain regions of the state and access transistors are disposed within afirst p-type region. Portions of the field isolation region are disposedbetween the first n-well region, the second n-well region, and the firstp-type region, and the first n-well region, the second n-well region,and the first p-type region are electrically isolated from one another.In a particular embodiment, the electronic device further includes asecond p-type doped region disposed below a particular portion of thefield isolation region, wherein the substrate includes a semiconductormaterial and a dopant at a dopant concentration, the second p-type dopedregion has a dopant concentration that is greater than the dopantconcentration of the semiconductor material, and the particular portionof the field isolation region abuts the first and second n-well regions.In a more particular embodiment, the electronic device further includesa p-type body contact region disposed within the first p-type region,wherein another particular portion of the field isolation region isdisposed between the p-type body contact region and the state and accesstransistors.

In a second aspect, a process of forming an electronic device includinga nonvolatile memory cell can include forming a field isolation regionwithin a substrate to define first, second, and third active regions,wherein the first, second, and third active regions are spaced apartfrom one another. The process can also include forming a floating gateelectrode over the substrate and a part of the field isolation region,wherein the floating gate includes a first portion disposed over thefirst active region, a second portion disposed over the second activeregion, and a third portion disposed over the third active region. Thefirst portion can have a first conductivity type and the first activeregion has a second conductivity type opposite the first conductivitytype, at least part of the second portion can have the secondconductivity type and the second active region can have the secondconductivity type, and the third portion can have the first conductivitytype and the third active region can have the second conductivity type.The process can further include forming an access gate electrode overthe third active region, wherein the access gate electrode and thefloating gate electrode are spaced apart from each other.

In an embodiment of the second aspect, the process further includesforming a first n-well region within the first active region, andforming a second n-well region within the second active region. In aparticular embodiment, the process further includes forming a mask overthe first, second, and third active regions, wherein the mask defines anopening disposed over a particular portion of the field isolationregion, and implanting a p-type dopant into the substrate at a locationbelow the particular portion of the field isolation region. In anotherparticular embodiment, forming the field isolation region furtherdefines a fourth active region, forming a p-well region that extends tothe third and fourth active regions, and forming a p-well contact regionwithin the fourth active region. In another embodiment, the processfurther includes forming a metal-containing layer over field isolationregion, the first, second, and third active regions, the floating gateelectrode, and the access gate electrode, reacting portions of themetal-containing layer and portions of the first, second, and thirdactive regions, the floating gate electrode, and the access gateelectrode to form metal-semiconductor members, wherein ametal-semiconductor member is substantially coterminous with thefloating gate electrode, and another metal-semiconductor member issubstantially coterminous with the access gate electrode. The processalso includes removing an unreacted portion of the metal-containinglayer.

In a third aspect, an electronic device including a nonvolatile memorycell can include a capacitor having a first electrode and a secondelectrode, wherein a control gate terminal is coupled to the firstelectrode, and a tunnel structure having a first electrode, a secondelectrode, and a tunnel dielectric layer, wherein an erase terminal iscoupled to the first electrode. The nonvolatile memory cell can alsoinclude a state transistor including a source region coupled to a sourceterminal, a drain region, a gate dielectric layer, and a gate electrode,wherein a floating gate of the nonvolatile memory cell includes the gateelectrode, the second electrode of the capacitor, and the secondelectrode of the tunnel structure. The nonvolatile memory cell canfurther include an access transistor including a source region, a drainregion coupled to a bit line terminal, and a gate electrode coupled toan access terminal, wherein the source region of the access transistoris coupled to the drain region of the state transistor. The nonvolatilememory cell can still further include a program unit coupled to thecontrol gate terminal, the erase terminal, the source terminal, the bitline terminal, and the access terminal, wherein the program unit isconfigured to program the nonvolatile memory cell by passing a firstcharge carrier through the gate electric layer of the state transistor.The nonvolatile memory cell can yet further include an erase unitcoupled to the control gate terminal, the erase terminal, the sourceterminal, the bit line terminal, and the access terminal, wherein theerase unit is configured to erase the nonvolatile memory cell by passinga second charge carrier through the tunnel dielectric layer of thetunnel structure.

In an embodiment of the third aspect, each of the capacitor and thetunnel structure includes a p-type transistor structure. In anotherembodiment, the control gate terminal is electrically connected to thefirst electrode of the capacitor, the erase terminal is electricallyconnected to the first electrode of the tunnel structure, the sourceterminal is electrically connected to the source region of the statetransistor, the bit line is electrically connected to the drain regionof the access transistor, and the source region of the access transistoris connected to the drain region of the state transistor.

Note that not all of the activities described above in the generaldescription or the examples are required, that a portion of a specificactivity may not be required, and that one or more further activitiesmay be performed in addition to those described. Still further, theorder in which activities are listed is not necessarily the order inwhich they are performed.

Certain features that are, for clarity, described herein in the contextof separate embodiments, may also be provided in combination in a singleembodiment. Conversely, various features that are, for brevity,described in the context of a single embodiment, may also be providedseparately or in any subcombination. Further, reference to values statedin ranges includes each and every value within that range.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any feature(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature of any or all the claims.

The specification and illustrations of the embodiments described hereinare intended to provide a general understanding of the structure of thevarious embodiments. The specification and illustrations are notintended to serve as an exhaustive and comprehensive description of allof the elements and features of apparatus and systems that use thestructures or methods described herein. Separate embodiments may also beprovided in combination in a single embodiment, and conversely, variousfeatures that are, for brevity, described in the context of a singleembodiment, may also be provided separately or in any subcombination.Further, reference to values stated in ranges includes each and everyvalue within that range. Many other embodiments may be apparent toskilled artisans only after reading this specification. Otherembodiments may be used and derived from the disclosure, such that astructural substitution, logical substitution, or another change may bemade without departing from the scope of the disclosure. Accordingly,the disclosure is to be regarded as illustrative rather thanrestrictive.

What is claimed is:
 1. An electronic device including a nonvolatilememory cell comprising: a capacitor having a first electrode and asecond electrode, wherein a control gate terminal is coupled to thefirst electrode, and the second electrode has a first conductivity type;a tunnel structure having a first electrode and a second electrode,wherein an erase terminal is coupled to the first electrode, and atleast a portion of the second electrode has a second conductivity typeopposite the first conductivity type; a state transistor including asource region, a drain region, and a gate electrode, wherein a floatinggate electrode for the nonvolatile memory cell includes the gateelectrode, the second electrode of the capacitor, and the secondelectrode of the tunnel structure; and an access transistor including asource region, a drain region, and a gate electrode, wherein the sourceregion of the access transistor is coupled to the drain region of thestate transistor.
 2. The electronic device of claim 1, wherein thesecond electrode of the capacitor, the second electrode of the tunnelstructure, the gate electrode of the state transistor, and the gateelectrode of the access transistor are formed from a same layercomprising polycrystalline silicon or amorphous silicon.
 3. Theelectronic device of claim 1, further comprising a metal-containingmember disposed over and substantially coterminous with the floatinggate.
 4. The electronic device of claim 1, wherein the capacitorincludes a p-channel transistor structure, the state transistor is afirst n-channel transistor, and the access transistor is a secondn-channel transistor.
 5. The electronic device of claim 4, whereinsubstantially all of the second electrode of the tunnel structure isn-type doped.
 6. The electronic device of claim 5, wherein the firstelectrode of the tunnel structure includes an n-well region and a p-typeregion that is disposed within the n-well region and adjacent to thesecond electrode of the tunnel structure.
 7. The electronic device ofclaim 6, further comprising: an n-well contact region disposed withinthe n-well region and adjacent to the p-type region; and ametal-containing member that contacts the n-well contact region.
 8. Theelectronic device of claim 5, wherein the first electrode of the tunnelstructure includes an n-well region that does not include a p-typeregion.
 9. The electronic device of claim 1, wherein: the firstelectrode of the tunnel structure includes an n-well region; the secondelectrode of the tunnel structure includes a p-type portion and ann-type portion, wherein the p-type portion is adjacent to a first sideof the second electrode, and the n-type portion is adjacent to a secondside of the second electrode that is opposite the first side; a p-typeregion is disposed within the n-well region and adjacent to the firstside of the second electrode; and an n-type region is disposed withinthe n-well region, having a higher dopant concentration than the n-wellregion, and is adjacent to the second side of the second electrode. 10.The electronic device of claim 1, wherein: the first electrode of thecapacitor includes a first n-well region; the first electrode of thetunnel structure includes a second n-well region; the source and drainregions of the state and access transistors are disposed within a firstp-type region; portions of the field isolation region are disposedbetween the first n-well region, the second n-well region, and the firstp-type region; and the first n-well region, the second n-well region,and the first p-type region are electrically isolated from one another.11. The electronic device of claim 10, further comprising a secondp-type doped region disposed below a particular portion of the fieldisolation region, wherein: the substrate includes a semiconductormaterial and a dopant at a dopant concentration; the second p-type dopedregion has a dopant concentration that is greater than the dopantconcentration of the semiconductor material; and the particular portionof the field isolation region abuts the first and second n-well regions.12. The electronic device of claim 11, further comprising a p-type bodycontact region disposed within the first p-type region, wherein anotherparticular portion of the field isolation region is disposed between thep-type body contact region and the state and access transistors.
 13. Theelectronic device of claim 1, wherein the floating gate electrode is atleast part of a single conductive member that further includes thesecond electrode of the tunnel structure.
 14. The electronic device ofclaim 13, wherein the single conductive member further includes thesecond electrode of the capacitor.
 15. The electronic device of claim 1,wherein the gate electrode of the access transistor is part of a wordline.
 16. An electronic device including a nonvolatile memory cellcomprising: a capacitor having a first electrode and a second electrode,wherein a control gate terminal is coupled to the first electrode; atunnel structure having a first electrode, a second electrode, and atunnel dielectric layer, wherein an erase terminal is coupled to thefirst electrode; a state transistor including a source region coupled toa source terminal, a drain region, a gate dielectric layer, and a gateelectrode, wherein a floating gate of the nonvolatile memory cellincludes the gate electrode, the second electrode of the capacitor, andthe second electrode of the tunnel structure; and an access transistorincluding a source region, a drain region coupled to a bit lineterminal, and a gate electrode coupled to an access terminal, whereinthe source region of the access transistor is coupled to the drainregion of the state transistor; a program unit coupled to the controlgate terminal, the erase terminal, the source terminal, the bit lineterminal, and the access terminal, wherein the program unit isconfigured to program the nonvolatile memory cell by passing a firstcharge carrier through the gate electric layer of the state transistor;and an erase unit coupled to the control gate terminal, the eraseterminal, the source terminal, the bit line terminal, and the accessterminal, wherein the erase unit is configured to erase the nonvolatilememory cell by passing a second charge carrier through the tunneldielectric layer of the tunnel structure.
 17. The electronic device ofclaim 16, wherein each of the capacitor and the tunnel structurecomprises a p-type transistor structure.
 18. The electronic device ofclaim 16, wherein: the control gate terminal is electrically connectedto the first electrode of the capacitor; the erase terminal iselectrically connected to the first electrode of the tunnel structure;the source terminal is electrically connected to the source region ofthe state transistor; the bit line is electrically connected to thedrain region of the access transistor; and the source region of theaccess transistor is connected to the drain region of the statetransistor.
 19. The electronic device of claim 16, wherein the floatinggate electrode is at least part of a single conductive member thatfurther includes the second electrode of the tunnel structure.
 20. Theelectronic device of claim 19, wherein the single conductive memberfurther includes the second electrode of the capacitor.